Application of Raman Spectroscopy in Single Crystal Silicon
author: Otis
2022-09-29
What is Raman Spectroscopy
Raman spectroscopy is a versatile, non-destructive technique based on the interaction of light with chemical bonds within a material that yields detailed information about chemical structure, phases and polymorphs, crystallinity and molecular interactions. Raman spectroscopy uses a monochromatic laser to probe materials, usually at visible or near-infrared wavelengths. Raman is a light scattering technique in which molecules scatter incident light from a high-intensity laser source. When a sample is irradiated, most of the light is scattered with no change in energy - this is called Rayleigh scattering. However, a small fraction of photons are scattered with the loss or gain of energy of the molecular vibrations - a phenomenon known as the Raman effect or Raman scattering. The energy of these vibrations is specific to the composition and structure of the molecule, which is why Raman is known as a chemical fingerprinting technique. Highly sensitive detectors and spectrometers are used to produce detailed and informative spectra from the collected light. Raman spectra are characterized by a number of peaks that show the intensity and wavelength position of the Raman scattered light. Each peak corresponds to a specific molecular bond vibration, including individual bonds such as C-C, C=C, N-O, C-H, etc.
Raman and monocrystalline silicon
Single crystal silicon (c-Si) plays a central role in the advanced manufacturing of optoelectronic and microelectronic devices, and microelectromechanical systems (MEMS) are an important semiconductor material. Raman spectroscopy is one of the common, if not essential, methods for analyzing the physical and chemical properties of silicon-based materials and structures. Raman spectroscopy is the result of inelastic interactions between photons of the incident laser and phonons of the material under test, allowing for surface or shallow internal characterization. Due to its non-destructive, non-contact, in-situ and high sensitivity features, Raman spectroscopy has been successfully applied in the field of semiconductor materials and 2D materials. Raman spectra of semiconductor crystals contain structural and physical information, including crystal states, crystal planes, grain sizes, Fano resonances, and electron mobility. Therefore, these properties can be characterized by quantifying the wave number, intensity, full width at half-peak (FWHM) and symmetry in the Raman spectrum of a sample using a specific theory of Raman spectroscopy.
Optosky's research-grade micro Raman spectrometer, the ATR8300, is a great advantage for testing single-crystal silicon, and the following is a spectrum of our ATR8300 testing single-crystal silicon.
Fig.1 Spectrum of single crystal silicon tested by ATR8300
Fig. 2 A partial enlarged view of the second-order peak of the Raman spectrum of single crystal silicon tested by ATR8300
Fig. 3 Spectrum of single crystal silicon tested by ATR8300 (after baseline correction)
Fig. 4 A partial enlarged view of the second-order peak of the Raman spectrum of single crystal silicon tested by ATR8300
Raman spectroscopy is a versatile, non-destructive technique based on the interaction of light with chemical bonds within a material that yields detailed information about chemical structure, phases and polymorphs, crystallinity and molecular interactions. Raman spectroscopy uses a monochromatic laser to probe materials, usually at visible or near-infrared wavelengths. Raman is a light scattering technique in which molecules scatter incident light from a high-intensity laser source. When a sample is irradiated, most of the light is scattered with no change in energy - this is called Rayleigh scattering. However, a small fraction of photons are scattered with the loss or gain of energy of the molecular vibrations - a phenomenon known as the Raman effect or Raman scattering. The energy of these vibrations is specific to the composition and structure of the molecule, which is why Raman is known as a chemical fingerprinting technique. Highly sensitive detectors and spectrometers are used to produce detailed and informative spectra from the collected light. Raman spectra are characterized by a number of peaks that show the intensity and wavelength position of the Raman scattered light. Each peak corresponds to a specific molecular bond vibration, including individual bonds such as C-C, C=C, N-O, C-H, etc.
Raman and monocrystalline silicon
Single crystal silicon (c-Si) plays a central role in the advanced manufacturing of optoelectronic and microelectronic devices, and microelectromechanical systems (MEMS) are an important semiconductor material. Raman spectroscopy is one of the common, if not essential, methods for analyzing the physical and chemical properties of silicon-based materials and structures. Raman spectroscopy is the result of inelastic interactions between photons of the incident laser and phonons of the material under test, allowing for surface or shallow internal characterization. Due to its non-destructive, non-contact, in-situ and high sensitivity features, Raman spectroscopy has been successfully applied in the field of semiconductor materials and 2D materials. Raman spectra of semiconductor crystals contain structural and physical information, including crystal states, crystal planes, grain sizes, Fano resonances, and electron mobility. Therefore, these properties can be characterized by quantifying the wave number, intensity, full width at half-peak (FWHM) and symmetry in the Raman spectrum of a sample using a specific theory of Raman spectroscopy.
Optosky's research-grade micro Raman spectrometer, the ATR8300, is a great advantage for testing single-crystal silicon, and the following is a spectrum of our ATR8300 testing single-crystal silicon.
Fig.1 Spectrum of single crystal silicon tested by ATR8300
Fig. 2 A partial enlarged view of the second-order peak of the Raman spectrum of single crystal silicon tested by ATR8300
Fig. 3 Spectrum of single crystal silicon tested by ATR8300 (after baseline correction)
Fig. 4 A partial enlarged view of the second-order peak of the Raman spectrum of single crystal silicon tested by ATR8300
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